One-dimensional bromo-bridged NiIII complexes [Ni(S,S-bn)2Br]Br2 (S,S-bn=2S,3S-diaminobutane):: Synthesis, physical properties, and electrostatic carrier doping

被引：28
|
作者：
Takaishi, Shinya [1 ]
Yamashita, Masahiro [1 ]
Matsuzaki, Hiroyuki [2 ]
Okamoto, Hiroshi [2 ]
Tanaka, Hisaaki [3 ]
Kuroda, Shin-ichi [3 ]
Goto, Atsushi [4 ]
Shimizu, Tadashi [4 ]
Takenobu, Taishi [5 ]
Iwasa, Yoshihiro [5 ]
机构：
[1] Tohoku Univ, Grad Sch Sci, Dept Chem, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Univ Tokyo, Grad Sch Frontier Sci, Chiba 2778561, Japan
[3] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Aichi 4648603, Japan
[4] Natl Inst Mat Sci, Tsukuba Magnet Lab, Tsukuba, Ibaraki 3050003, Japan
[5] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
CHEMISTRY-A EUROPEAN JOURNAL | 2008年 / 14卷 / 02期
关键词：
bridging ligands; carrier doping; EPR spectroscopy; field-effect transistors; nickel;
D O I：
10.1002/chem.200701299
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A new bromo-bridged Ni-III. compound has been synthesized. This compound displayed a strong antiferromagnetic interaction between spins located on Ni-III species (J=(2350 +/- 500) K) that result from the strong covalency of the Ni-Br bond and the spin-Peierls transition below 150K. This was shown by the results of magnetic susceptibility and Br-81 nuclear quadrupole resonance spectroscopy analysis. We succeeded in the electrostatic carrier doping of a single crystalline sample by using a field-effect transistor device. This compound also showed n-type semiconductor behavior, which can be reasonably rationalized by the existence of a small amount of Ni-II impurities.
引用
收藏
页码：472 / 477
页数：6
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