One-dimensional bromo-bridged NiIII complexes [Ni(S,S-bn)2Br]Br2 (S,S-bn=2S,3S-diaminobutane):: Synthesis, physical properties, and electrostatic carrier doping

被引：28

作者：

Takaishi, Shinya ^{[1
]}

Yamashita, Masahiro ^{[1
]}

Matsuzaki, Hiroyuki ^{[2
]}

Okamoto, Hiroshi ^{[2
]}

Tanaka, Hisaaki ^{[3
]}

Kuroda, Shin-ichi ^{[3
]}

Goto, Atsushi ^{[4
]}

Shimizu, Tadashi ^{[4
]}

Takenobu, Taishi ^{[5
]}

Iwasa, Yoshihiro ^{[5
]}

机构：

[1] Tohoku Univ, Grad Sch Sci, Dept Chem, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Univ Tokyo, Grad Sch Frontier Sci, Chiba 2778561, Japan

[3] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Aichi 4648603, Japan

[4] Natl Inst Mat Sci, Tsukuba Magnet Lab, Tsukuba, Ibaraki 3050003, Japan

[5] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

CHEMISTRY-A EUROPEAN JOURNAL | 2008年 / 14卷 / 02期

关键词：

bridging ligands; carrier doping; EPR spectroscopy; field-effect transistors; nickel;

D O I：

10.1002/chem.200701299

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new bromo-bridged Ni-III. compound has been synthesized. This compound displayed a strong antiferromagnetic interaction between spins located on Ni-III species (J=(2350 +/- 500) K) that result from the strong covalency of the Ni-Br bond and the spin-Peierls transition below 150K. This was shown by the results of magnetic susceptibility and Br-81 nuclear quadrupole resonance spectroscopy analysis. We succeeded in the electrostatic carrier doping of a single crystalline sample by using a field-effect transistor device. This compound also showed n-type semiconductor behavior, which can be reasonably rationalized by the existence of a small amount of Ni-II impurities.

引用

页码：472 / 477

页数：6

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