Novel 600-V trench high-conductivity IGBT (trench HiGT) with short-circuit capability

被引：32

作者：

Oyama, K ^{[1
]}

Kohno, Y ^{[1
]}

Sakano, J ^{[1
]}

Uruno, J ^{[1
]}

Ishizaka, K ^{[1
]}

Kawase, D ^{[1
]}

Mori, M ^{[1
]}

机构：

[1] Hitachi Ltd, Hitachi Res Lab, Hitachi, Ibaraki 3191292, Japan

来源：

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年

关键词：

D O I：

10.1109/ISPSD.2001.934642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes new 600-V trench high-conductivity IGBTs (trench HiGTs) that have lower on-state voltages of 1.42 and 1.55 V at 200 A/cm(2) and tough short-circuit capabilities of 5 and 10 mus, respectively. These HiGT have a better trade-off between turn-off losses and on-state voltages than conventional trench IGBTs, even better than planar IGBTs. They also offer a lower reverse transfer capacitances (-50%) than the planar IGBT. The input capacitance obtained were lower (-30% to -60%) than that of a conventional trench IGBT.

引用

页码：417 / 420

页数：4

共 49 条

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