Improved device performance in nonpolar a-plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact

被引：5
|
作者：
Kim, Dong Ho [1 ]
Kim, Su Jin [1 ]
Kim, Seung Hwan [2 ]
Jeong, Tak [2 ]
Hwang, Sung Min [3 ]
Kim, Tae Geun [1 ]
机构：
[1] Korea Univ, Sch Elect & Elect Engn, Seoul 136701, South Korea
[2] Korea Photon Technol Inst, LED Device Team, Kwangju 500779, South Korea
[3] Korea Elect Technol Inst, Optoelect Lab, Gyeonggi 463816, South Korea
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 08期
基金：
新加坡国家研究基金会;
关键词：
nonpolar GaN; LED; Ni-Al alloys; current injection; VAPOR-PHASE EPITAXY; SAPPHIRE;
D O I：
10.1002/pssr.201105265
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The authors report upon the increased light-output power (P(out)) via a reduction in the forward voltage (V(f)) for nonpolar a-plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 x 10 (5) whereas that of a typical Ti/Al/Ni/Au contact is 6.8 x 10(-4) cm(2), after annealing at 700 degrees C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The V(f) of the nonpolar LEDs decreases by 10% and P(out) increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：274 / 276
页数：3
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