Preparation of ferroelectric NaNbO3 thin films on MgO substrate by pulsed laser deposition

We have successfully fabricated good quality NaNbO3 films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO3 (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO3 filin was deposited. X-ray diffraction showed that the NaNbO3 film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The P-E hysteresis loop of the NaNbO3 filin was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO3 films epitaxially grown on (100)SrTiO3 substrate.