Preparation of ferroelectric NaNbO3 thin films on MgO substrate by pulsed laser deposition

被引：0
|
作者：
Oda, S. [1 ]
Saito, T. [1 ]
Wada, T. [1 ]
Adachi, H. [2 ]
机构：
[1] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan
[2] ATR Lab, Matsushita Elect Ind Co Ltd, Kyoto 61902, Japan
来源：
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/ISAF.2007.4393182
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have successfully fabricated good quality NaNbO3 films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO3 (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO3 filin was deposited. X-ray diffraction showed that the NaNbO3 film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The P-E hysteresis loop of the NaNbO3 filin was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO3 films epitaxially grown on (100)SrTiO3 substrate.
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页码：106 / +
页数：2
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