In-situ x-ray photoemission spectromicroscopy of electromigration in patterned Al-Cu lines with maximum

被引：0

作者：

Solak, HH ^{[1
]}

Lorusso, GF ^{[1
]}

Singh, S ^{[1
]}

Cerrina, F ^{[1
]}

Underwood, JH ^{[1
]}

Batson, P ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

MATERIALS RELIABILITY IN MICROELECTRONICS VIII | 1998年 / 516卷

关键词：

D O I：

10.1557/PROC-516-39

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the application of a unique photoemission spectromicroscope (MAXIMUM) to the study of electromigration phenomena in Al-Cu interconnects. MAXIMUM is a scanning type photoemission microscope that uses multilayer-coated optics to focus 130 eV x-rays to a sub-0.1 mu m spot. An electron energy analyzer collects photoelectrons in a chosen spectral region of interest to form an image of the sample that is sensitive to chemical states of elements on the sample surface. Al-Cu lines were characterized by spectromicroscopy techniques before and after electromigration stressing in the UHV environment of the microscope chamber. We present spectre-micrographs showing the chemical and structural changes on AI-Cu line surfaces as a result of the electromigration process.

引用

页码：39 / 43

页数：5

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