In-situ x-ray photoemission spectromicroscopy of electromigration in patterned Al-Cu lines with maximum

被引：0
|
作者：
Solak, HH [1 ]
Lorusso, GF [1 ]
Singh, S [1 ]
Cerrina, F [1 ]
Underwood, JH [1 ]
Batson, P [1 ]
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
来源：
MATERIALS RELIABILITY IN MICROELECTRONICS VIII | 1998年 / 516卷
关键词：
D O I：
10.1557/PROC-516-39
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the application of a unique photoemission spectromicroscope (MAXIMUM) to the study of electromigration phenomena in Al-Cu interconnects. MAXIMUM is a scanning type photoemission microscope that uses multilayer-coated optics to focus 130 eV x-rays to a sub-0.1 mu m spot. An electron energy analyzer collects photoelectrons in a chosen spectral region of interest to form an image of the sample that is sensitive to chemical states of elements on the sample surface. Al-Cu lines were characterized by spectromicroscopy techniques before and after electromigration stressing in the UHV environment of the microscope chamber. We present spectre-micrographs showing the chemical and structural changes on AI-Cu line surfaces as a result of the electromigration process.
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页码：39 / 43
页数：5
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