High-temperature operation of 1.3μm AlGaInAs strained multiple quantum well lasers

被引：22

作者：

Takemasa, K

Munakata, T

Kobayashi, M

Wada, H

Kamijoh, T

机构：

[1] Oki Elect Ind Co Ltd, Optoelect Labs, Hachioji, Tokyo 193, Japan

[2] Oki Elect Ind Co Ltd, Components Div, Hachioji, Tokyo 193, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 12期

关键词：

D O I：

10.1049/el:19980876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-temperature operation of 1.3 mu m AlGaInAs/InP strained multiple quantum well lasers is demonstrated. An excellent CW characteristic temperature of 111K was obtained between 20 and 80 degrees C and a record high operating temperature of 210 degrees C was achieved with a 700 mu m long laser under pulse excitation. Power reductions at a constant current with increasing temperature were also evaluated at 80 degrees C to be -1.27 and -1.67dB under pulse and CW excitations, respectively.

引用

页码：1231 / 1233

页数：3

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