High-temperature operation of 1.3μm AlGaInAs strained multiple quantum well lasers

被引：22
|
作者：
Takemasa, K
Munakata, T
Kobayashi, M
Wada, H
Kamijoh, T
机构：
[1] Oki Elect Ind Co Ltd, Optoelect Labs, Hachioji, Tokyo 193, Japan
[2] Oki Elect Ind Co Ltd, Components Div, Hachioji, Tokyo 193, Japan
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 12期
关键词：
D O I：
10.1049/el:19980876
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-temperature operation of 1.3 mu m AlGaInAs/InP strained multiple quantum well lasers is demonstrated. An excellent CW characteristic temperature of 111K was obtained between 20 and 80 degrees C and a record high operating temperature of 210 degrees C was achieved with a 700 mu m long laser under pulse excitation. Power reductions at a constant current with increasing temperature were also evaluated at 80 degrees C to be -1.27 and -1.67dB under pulse and CW excitations, respectively.
引用
收藏
页码：1231 / 1233
页数：3
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