Generation of interstitial boron by minority-carrier injection

被引：0

作者：

Ohshita, Y ^{[1
]}

Vu, TK ^{[1
]}

Yamaguchi, M ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempa Ku, Nagoya, Aichi 4688511, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 75卷 / 3-4期

关键词：

light degradation; B-O defect;

D O I：

10.1016/S0927-0248(02)00188-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The performance of boron-doped CZ Si solar cell is degraded by the light irradiation and/or the minority carrier (electron) injection. To understand these phenomena, ab initio molecular orbital calculations are carried out using a cluster model. The theoretical results indicate that the activation energy for kicking out a substitutional B by the interstitial Si is decreased due to the injected electron. Therefore,the interstitial B is easily produced by the minority carrier injection and then diffuses in the Si crystal, resulting in the generation of the interstitial B and interstitial O defect complex. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：405 / 409

页数：5

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