Interface dislocations in InxGa1-xN/GaN heterostructures

被引：10
|
作者：
Li, Q. T. [1 ]
Minj, A. [1 ]
Chauvat, M. P. [1 ]
Chen, J. [1 ]
Ruterana, P. [1 ]
机构：
[1] CNRS ENSICAEN UCBN CEA, CIMAP UMR 6252, 6 Blvd Marechal Juin, F-14050 Caen, France
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 04期
关键词：
Burgers vector; edge dislocations; InGaN; interfaces; screw dislocations; transmission electron microscopy; MULTIPLE-QUANTUM WELLS; MISFIT DISLOCATIONS; CRITICAL THICKNESS; PHASE-SEPARATION; INGAN EPILAYERS; MOLECULAR-BEAM; LAYERS; LUMINESCENCE; GENERATION; EPITAXY;
D O I：
10.1002/pssa.201600442
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Interface dislocations have been investigated by transmission electron microscopy for InxGa1-xN (50 nm)/GaN heterostructures grown by metal-organic vapor phase epitaxy for 0.13< x< 0.20. Structural properties of the dislocations were analysed by conventional transmission electron microscopy by diffraction contrast. We observed two kinds of dislocations lying in the interface: screw type dislocations with Burgers vector b = a = 1/3 < 11 - 20> and pure edge misfit dislocations. The screw type dislocations were observed for x <= 0.17 and misfit dislocations for x >= 0.18. While the formation of MDs may be explained in the framework of conventional interface strain relaxation, the presence of screw-type dislocations may bring new insight on processes in hexagonal materials heteroepitaxy. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数：5
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