Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures

被引：30
|
作者：
Wu, Feng [1 ]
Young, E. C. [1 ]
Koslow, I. [1 ]
Hardy, M. T. [1 ]
Hsu, P. S. [1 ]
Romanov, A. E. [1 ,2 ]
Nakamura, S. [1 ,3 ]
DenBaars, S. P. [1 ,3 ]
Speck, J. S. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期
基金：
美国国家科学基金会;
关键词：
INGAN EPILAYERS; GAN;
D O I：
10.1063/1.3671113
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we report on observations of the operation of secondary slip systems to relieve lattice mismatch stress in semipolar InGaN/GaN heterostructures. Two-dimensional arrays of misfit dislocations were observed. Consistent with previous reports, primary relaxation occurred along the projected c direction via primary slip on the (0001) basal plane. In addition, evidence for secondary relaxation was detected in cathodoluminescence spectroscopy, high resolution x-ray diffraction, and transmission electron microscopy (TEM) studies. The secondary misfit dislocations were determined by TEM to have a-type Burgers vectors a/3 <(2) over bar 110 > and line directions along < 4 (2) over bar(2) over bar(3) over bar >, consistent with prismatic slip on one of the m-type planes inclined with respect to the (11 (2) over bar2) growth surface. Evidence of an additional slip system with approximate misfit line direction of type < 20 (2) over bar(3) over bar > is also given. (C) 2011 American Institute
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页数：4
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