Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures

被引：30

作者：

Wu, Feng ^{[1
]}

Young, E. C. ^{[1
]}

Koslow, I. ^{[1
]}

Hardy, M. T. ^{[1
]}

Hsu, P. S. ^{[1
]}

Romanov, A. E. ^{[1
,2
]}

Nakamura, S. ^{[1
,3
]}

DenBaars, S. P. ^{[1
,3
]}

Speck, J. S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

基金：

美国国家科学基金会;

关键词：

INGAN EPILAYERS; GAN;

D O I：

10.1063/1.3671113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report on observations of the operation of secondary slip systems to relieve lattice mismatch stress in semipolar InGaN/GaN heterostructures. Two-dimensional arrays of misfit dislocations were observed. Consistent with previous reports, primary relaxation occurred along the projected c direction via primary slip on the (0001) basal plane. In addition, evidence for secondary relaxation was detected in cathodoluminescence spectroscopy, high resolution x-ray diffraction, and transmission electron microscopy (TEM) studies. The secondary misfit dislocations were determined by TEM to have a-type Burgers vectors a/3 <(2) over bar 110 > and line directions along < 4 (2) over bar(2) over bar(3) over bar >, consistent with prismatic slip on one of the m-type planes inclined with respect to the (11 (2) over bar2) growth surface. Evidence of an additional slip system with approximate misfit line direction of type < 20 (2) over bar(3) over bar > is also given. (C) 2011 American Institute

引用

页数：4

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