Interface dislocations in InxGa1-xN/GaN heterostructures

被引：10

作者：

Li, Q. T. ^{[1
]}

Minj, A. ^{[1
]}

Chauvat, M. P. ^{[1
]}

Chen, J. ^{[1
]}

Ruterana, P. ^{[1
]}

机构：

[1] CNRS ENSICAEN UCBN CEA, CIMAP UMR 6252, 6 Blvd Marechal Juin, F-14050 Caen, France

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 04期

关键词：

Burgers vector; edge dislocations; InGaN; interfaces; screw dislocations; transmission electron microscopy; MULTIPLE-QUANTUM WELLS; MISFIT DISLOCATIONS; CRITICAL THICKNESS; PHASE-SEPARATION; INGAN EPILAYERS; MOLECULAR-BEAM; LAYERS; LUMINESCENCE; GENERATION; EPITAXY;

D O I：

10.1002/pssa.201600442

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interface dislocations have been investigated by transmission electron microscopy for InxGa1-xN (50 nm)/GaN heterostructures grown by metal-organic vapor phase epitaxy for 0.13< x< 0.20. Structural properties of the dislocations were analysed by conventional transmission electron microscopy by diffraction contrast. We observed two kinds of dislocations lying in the interface: screw type dislocations with Burgers vector b = a = 1/3 < 11 - 20> and pure edge misfit dislocations. The screw type dislocations were observed for x <= 0.17 and misfit dislocations for x >= 0.18. While the formation of MDs may be explained in the framework of conventional interface strain relaxation, the presence of screw-type dislocations may bring new insight on processes in hexagonal materials heteroepitaxy. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：5

共 50 条

[21] InxGa1-xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1-xN
Manz, C
Kunzer, M
Obloh, H
Ramakrishnan, A
Kaufmann, U
APPLIED PHYSICS LETTERS, 1999, 74 (26) : 3993 - 3995
[22] Effect of in contents on the electronic and optical properties of 2D GaN/ InxGa1-xN heterostructures
Wu, Hai-Hong
Song, Kai
Li, Kun
Meng, Shuai
Wang, Wei-Hua
Li, Wang
Yang, Wen
VACUUM, 2024, 224
[23] Impact of Random Dopant Fluctuations on the Electronic Properties of InxGa1-xN/GaN Axial Nanowire Heterostructures
Marquardt, Oliver
Geelhaar, Lutz
Brandt, Oliver
NANO LETTERS, 2015, 15 (07) : 4289 - 4294
[24] Minimizing the impact of surface potentials in axial InxGa1-xN/GaN nanowire heterostructures by reducing their diameter
Marquardt, O.
Geelhaar, L.
Brandt, O.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (39)
[25] Minimizing the influence of surface potentials in axial InxGa1-xN/GaN nanowire heterostructures by reducing their diameter
Marquardt, Oliver
Geelhaar, Lutz
Brandt, Oliver
2014 14th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2014), 2014, : 15 - 16
[26] Luminous Efficiency of Axial InxGa1-xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials
Marquardt, Oliver
Hauswald, Christian
Woelz, Martin
Geelhaar, Lutz
Brandt, Oliver
NANO LETTERS, 2013, 13 (07) : 3298 - 3304
[27] Comparison of InxGa1-xN/GaN MQWs grown on GaN and sapphire substrates
Kim, T. S.
Park, J. Y.
Cuong, T. V.
Hong, C. -H.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (05) : 2001 - 2005
[28] Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD
Tagliente, MA
Tapfer, L
Waltereit, P
Brandt, O
Plogg, KH
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (10A) : A192 - A197
[29] Comparative study of stimulated emission in GaN, AlxGa1-xN, and InxGa1-xN
AT&T Bell Lab, Murray Hill, United States
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1996, : 455 - 456
[30] Complete characterization of AlxGa1-xN/InxGa1-xN/GaN devices by SIMS
Huang, C
Mitha, S
Erickson, JW
ClarkPhelps, R
Sheng, J
Gao, Y
GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 281 - 285

← 1 2 3 4 5 →