Heavy atomic-layer doping of nitrogen in Si1-xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD

被引：6
|
作者：
Kawashima, Tomoyuki [1 ]
Sakuraba, Masao [1 ]
Tillack, Bernd [2 ,3 ]
Murota, Junichi [1 ]
机构：
[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] IHP, D-15236 Frankfurt, Oder, Germany
[3] Tech Univ Berlin, D-10587 Berlin, Germany
来源：
THIN SOLID FILMS | 2010年 / 518卷
关键词：
Chemical vapor deposition (CVD); Atomic-layer doping; SiGe; N; Thermal stability; X-ray photoelectron spectroscopy (XPS); RESONANT-TUNNELING DIODES; ELECTRICAL CHARACTERISTICS; TEMPERATURE; SILICON;
D O I：
10.1016/j.tsf.2009.10.056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
N atomic-layer doping in a nanometer-order Si/Si1-xGex/Si(100) heterostructure using ultraclean low-pressure chemical vapor deposition and its thermal stability at 650 degrees C were investigated. In the Si0.5Ge0.5 epitaxial layer, it is found that a N doping dose of 6 x 10(14) cm(-2) can be confined within an about 1.5 nm-thick region even after 650 degrees C heat treatment in contrast to the result for Si cap layer growth on the thermally nitrided Si(100) with a N doping dose of 6 x 10(14) cm(-2) which was found to be amorphous. Moreover, it is suggested that the confined N atoms in Si1-xGex preferentially form Si-N bonds and that formation Of Si3N4 is enhanced by the heat treatment at 650 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：S62 / S64
页数：3
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