Heavy atomic-layer doping of nitrogen in Si1-xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD

被引：6

作者：

Kawashima, Tomoyuki ^{[1
]}

Sakuraba, Masao ^{[1
]}

Tillack, Bernd ^{[2
,3
]}

Murota, Junichi ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] IHP, D-15236 Frankfurt, Oder, Germany

[3] Tech Univ Berlin, D-10587 Berlin, Germany

来源：

THIN SOLID FILMS | 2010年 / 518卷

关键词：

Chemical vapor deposition (CVD); Atomic-layer doping; SiGe; N; Thermal stability; X-ray photoelectron spectroscopy (XPS); RESONANT-TUNNELING DIODES; ELECTRICAL CHARACTERISTICS; TEMPERATURE; SILICON;

D O I：

10.1016/j.tsf.2009.10.056

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N atomic-layer doping in a nanometer-order Si/Si1-xGex/Si(100) heterostructure using ultraclean low-pressure chemical vapor deposition and its thermal stability at 650 degrees C were investigated. In the Si0.5Ge0.5 epitaxial layer, it is found that a N doping dose of 6 x 10(14) cm(-2) can be confined within an about 1.5 nm-thick region even after 650 degrees C heat treatment in contrast to the result for Si cap layer growth on the thermally nitrided Si(100) with a N doping dose of 6 x 10(14) cm(-2) which was found to be amorphous. Moreover, it is suggested that the confined N atoms in Si1-xGex preferentially form Si-N bonds and that formation Of Si3N4 is enhanced by the heat treatment at 650 degrees C. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S62 / S64

页数：3

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