Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Song, XW [1 ]
Qu, Y [1 ]
Li, M [1 ]
Gao, X [1 ]
Li, XQ [1 ]
Zhang, XD [1 ]
机构：
[1] Changchun Inst Opt & Fine Mech, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China
来源：
ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS II | 1998年 / 3556卷
关键词：
GaAlAs/GaAs; quantum wells; photoluminescence;
D O I：
10.1117/12.318248
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we will report GaAlAs/GaAs gradient refraction index separate confinement quantum wells structures by MOCVD growth and its optical properties. The sample were characterized by high-resolution photoluminescence measurements. For 8nm single quantum well, the excitation luminescence spectra at 10K are characterized by transitions which has a linewidth (FWHM) of 6.2nm and large intensity, indicating abrupt GaAlAs/GaAs interface. The shift of X(e-hh) peak position versus the excitation level are also observed. The results of PL measurement show that sample quality has met the requirement of design and proven to be satisfactory.
引用
收藏
页码：170 / 172
页数：3
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