PHOTOLUMINESCENCE INVESTIGATION OF GAN FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON (100)GAAS

被引：57
|
作者：
HONG, CH
PAVLIDIS, D
BROWN, SW
RAND, SC
机构：
[1] Solid State Electronics Laboratory, Department of Electronic Engineering and Computational Science, University of Michigan, Ann Arbor
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期
关键词：
D O I：
10.1063/1.358862
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3.36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted, donor-acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K. © 1995 American Institute of Physics.
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页码：1705 / 1709
页数：5
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