A novel isolation technology in bulk micromachining using deep reactive ion etching and a polysilicon refill

被引:16
|
作者
Zhang, DC [1 ]
Li, ZH [1 ]
Li, T [1 ]
Wu, GY [1 ]
机构
[1] Peking Univ, Inst Microelect, Natl Key Lab Nano Micro Fabricat Technol, Beijing 100871, Peoples R China
关键词
D O I
10.1088/0960-1317/11/1/303
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Isolation and interconnection of microstructures are important for microelectrical-mechanical system technology, because a microstructure generally acts as both a mechanical unit and an electric unit. In this work, we have developed a novel isolation technology for a bulk micromachining process using DRIE (deep reactive ion etching) and wafer bonding technology, which has gained importance in recent years. The technology combines DRIE and polysilicon refill technologies. A series of polysilicon bars covered by thermal oxide serves as the isolation structure. The structure can be used for flexible or rigid connection between two moveable microstructures or between a fixed structure and a moveable microstructure. The measured isolation and mechanical performance is good enough to realize its function.
引用
收藏
页码:13 / 19
页数:7
相关论文
共 50 条
  • [31] SILICON GERMANIUM AS A NOVEL MASK FOR SILICON DEEP REACTIVE ION ETCHING
    Serry, M.
    Ibrahim, M.
    Sedky, S.
    2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS), 2012,
  • [32] Silicon Germanium As a Novel Mask for Silicon Deep Reactive Ion Etching
    Serry, Mohamed
    Rubin, Andrew
    Ibrahem, Mohamed
    Sedky, Sherif
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2013, 22 (05) : 1081 - 1088
  • [33] A novel etching technology with reactive ion etching system for GaAs via-hole etching applications
    Lin, CS
    Fang, YK
    Ting, SF
    Wu, CL
    Chang, CS
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2003, 16 (01) : 57 - 59
  • [34] Silicon nanowire fabrication using novel hydrogenation-assisted deep reactive ion etching
    Sammak, Amir
    Azimi, Soheil
    Mohajerzadeh, Shams
    Khadem-Hosseini, Bahar
    Fallah-Azad, Babak
    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 524 - 525
  • [35] Formation of silicon nanostructures with a combination of spacer technology and deep reactive ion etching
    Bien, Daniel C. S.
    Lee, Hing Wah
    Badaruddin, Siti Aishah Mohamad
    NANOSCALE RESEARCH LETTERS, 2012, 7
  • [36] Formation of silicon nanostructures with a combination of spacer technology and deep reactive ion etching
    Daniel CS Bien
    Hing Wah Lee
    Siti Aishah Mohamad Badaruddin
    Nanoscale Research Letters, 7
  • [37] Silicon fusion bonding and deep reactive ion etching: A new technology for microstructures
    Klaassen, EH
    Petersen, K
    Noworolski, JM
    Logan, J
    Maluf, NI
    Brown, J
    Storment, C
    McCulley, W
    Kovacs, GTA
    SENSORS AND ACTUATORS A-PHYSICAL, 1996, 52 (1-3) : 132 - 139
  • [38] Suppression of aluminum contamination in polysilicon reactive ion etching using highly purified chlorine gas
    Sato, M
    Arita, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (07) : 2541 - 2547
  • [39] Deep, vertical etching for GaAs using inductively coupled plasma/reactive ion etching
    Booker, Katherine
    Mayon, Yahuitl Osorio
    Jones, Christopher
    Stocks, Matthew
    Blakers, Andrew
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020, 38 (01):
  • [40] Advanced etch tool for high etch rate deep reactive ion etching in silicon micromachining production environment
    Schilp, A
    Hausner, M
    Puech, M
    Launay, N
    Karagoezoglu, H
    Laermer, F
    ADVANCED MICROSYSTEMS FOR AUTOMOTIVE APPLICATIONS 2001, 2001, : 229 - 236