A novel isolation technology in bulk micromachining using deep reactive ion etching and a polysilicon refill

被引:16
|
作者
Zhang, DC [1 ]
Li, ZH [1 ]
Li, T [1 ]
Wu, GY [1 ]
机构
[1] Peking Univ, Inst Microelect, Natl Key Lab Nano Micro Fabricat Technol, Beijing 100871, Peoples R China
关键词
D O I
10.1088/0960-1317/11/1/303
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Isolation and interconnection of microstructures are important for microelectrical-mechanical system technology, because a microstructure generally acts as both a mechanical unit and an electric unit. In this work, we have developed a novel isolation technology for a bulk micromachining process using DRIE (deep reactive ion etching) and wafer bonding technology, which has gained importance in recent years. The technology combines DRIE and polysilicon refill technologies. A series of polysilicon bars covered by thermal oxide serves as the isolation structure. The structure can be used for flexible or rigid connection between two moveable microstructures or between a fixed structure and a moveable microstructure. The measured isolation and mechanical performance is good enough to realize its function.
引用
收藏
页码:13 / 19
页数:7
相关论文
共 50 条
  • [11] REACTIVE ION ETCHING (RIE) TECHNIQUES FOR MICROMACHINING APPLICATIONS
    LI, YX
    WOLFFENBUTTEL, MR
    FRENCH, PJ
    LAROS, M
    SARRO, PM
    WOLFFENBUTTEL, RF
    SENSORS AND ACTUATORS A-PHYSICAL, 1994, 41 (1-3) : 317 - 323
  • [12] ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF POLYSILICON USING SF6
    PARRENS, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1403 - 1407
  • [13] Deep reactive ion etching of silicon using an aluminum etching mask
    Wang, WC
    Ho, JN
    Reinhall, P
    OPTO-IRELAND 2002: OPTICS AND PHOTONICS TECHNOLOGIES AND APPLICATIONS, PTS 1 AND 2, 2003, 4876 : 633 - 640
  • [14] Deep reactive ion etching of silicon using an aluminum etching mask
    Wang, WC
    Ho, JN
    Reinhall, P
    ASDAM '02, CONFERENCE PROCEEDINGS, 2002, : 31 - 34
  • [15] Novel planarization of trench isolation using polysilicon refill and etchback of chemical-mechanical polish
    Cheng, Juing-Yi
    Lei, Tan Fu
    Chao, Tien Sheng
    Journal of the Electrochemical Society, 1995, 142 (10)
  • [16] A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
    CHENG, JY
    LEI, TF
    CHAO, TS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (10) : L187 - L188
  • [17] Reactive ion etching for high aspect ratio silicon micromachining
    Rangelow, IW
    SURFACE & COATINGS TECHNOLOGY, 1997, 97 (1-3): : 140 - 150
  • [18] Deep reactive ion etching:: a promising technology for micro- and nanosatellites
    Ayón, AA
    Bayt, RL
    Breuer, KS
    SMART MATERIALS & STRUCTURES, 2001, 10 (06): : 1135 - 1144
  • [20] Pattern profile control of polysilicon in magnetron reactive ion etching
    Kimizuka, M
    Ozaki, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (02): : 221 - 225