Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 μm AlGaInAs MQW distributed-reflector lasers

被引：19
|
作者：
Matsuda, M. [1 ,2 ,3 ]
Simoyama, T. [1 ,2 ,3 ]
Uetake, A. [1 ,2 ,3 ]
Okumura, S. [1 ]
Ekawa, M. [1 ,2 ,3 ]
Yamamoto, T. [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[3] PETRA, Bunkyo Ku, Tokyo 1120014, Japan
来源：
ELECTRONICS LETTERS | 2012年 / 48卷 / 08期
关键词：
D O I：
10.1049/el.2012.0411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Uncooled, low-driving-current 25.8 Gbit/s directmodulation with clear eye-opening up to 85 degrees C is demonstrated using 1.3 mm AlGaInAs multiple quantum well (MQW) distributed-reflector lasers. The peak driving currents were as low as 30.0 and 38.9 mA at 25 and 85 degrees C, respectively.
引用
收藏
页码：450 / 451
页数：2
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