LOW-THRESHOLD CURRENT-DENSITY 1.3-MU-M STRAINED-LAYER QUANTUM-WELL LASERS USING N-TYPE MODULATION DOPING

被引：15
|
作者：
YAMAMOTO, T
WATANABE, T
IDE, S
TANAKA, K
NOBUHARA, H
WAKAO, K
机构：
[1] Fujitsu Laboratories Ltd., Atsugi
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 10期
关键词：
Cavity resonators - Charge carriers - Electric current distribution - Electron energy analyzers - Gain control - Semiconducting gallium arsenide - Semiconducting indium phosphide - Semiconducting silicon - Semiconductor doping - Semiconductor growth - Semiconductor quantum wells - Substrates;
D O I：
10.1109/68.329626
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We developed 1.3 mum n-type modulation-doped strained-layer quantum-well lasers. Modulation-doped lasers with long cavities (low threshold gain) exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 250 A/cm2 for 1500 mum long lasers with five quantum wells. The estimated threshold current density for an infinite cavity length was 38 A/cm2/well. This is the lowest value for InGaAsP/InGaAsP and InGaAs/InGaAsP quantum well lasers to our knowledge.
引用
收藏
页码：1165 / 1166
页数：2
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