Defect-induced Si/Ge intermixing on the Ge/Si(100) surface

被引：9
|
作者：
Zhu, XY
Lee, YH [1 ]
机构：
[1] Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Dept Phys, Jeonju 561756, South Korea
[2] Jeonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea
来源：
PHYSICAL REVIEW B | 1999年 / 59卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.59.9764
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si/Ge interfacial intermixing phenomena have often been observed in epitaxial Ge overlayer growth on Si surfaces. Yet, it is not clear if this Si/Ge intermixing originates from an energetically favorable configuration or from nonequilibrium growth conditions. Using the first-principles calculations we propose a model of defect-induced Si/Ge intermixing that is both energetically and kinetically favorable. We further discuss the intermixing phenomena at stepped Si surfaces. [S0163-1829(99)10515-0].
引用
收藏
页码：9764 / 9767
页数：4
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