Defect-induced Si/Ge intermixing on the Ge/Si(100) surface

被引：9

作者：

Zhu, XY

Lee, YH ^{[1
]}

机构：

[1] Jeonbuk Natl Univ, Dept Semicond Sci & Technol, Dept Phys, Jeonju 561756, South Korea

[2] Jeonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.59.9764

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si/Ge interfacial intermixing phenomena have often been observed in epitaxial Ge overlayer growth on Si surfaces. Yet, it is not clear if this Si/Ge intermixing originates from an energetically favorable configuration or from nonequilibrium growth conditions. Using the first-principles calculations we propose a model of defect-induced Si/Ge intermixing that is both energetically and kinetically favorable. We further discuss the intermixing phenomena at stepped Si surfaces. [S0163-1829(99)10515-0].

引用

页码：9764 / 9767

页数：4

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