Flicker noise characterization and modeling of MOSFETs for RF IC design

This paper reviews the recent results of the flicker noise characterization and modeling of MOSFETs for,RF IC design. The dependences of flicker noise characteristics to process parameters, such as the thickness and quality of gate oxide, and the device parameters, such as the channel length/width and finger, have been summarized to better understand the flicker noise behavior and develop physical and accurate flicker noise models. The physical origin of the flicker, noise and the issues of the existing compact models in predicting the flicker noise characteristics have been also discussed Furthermore, the impact of flicker noise to the phase noise of RF circuits is studied while looking for either process or circuit approaches to reduce the influence of flicker noise contribution to the circuit noise. Finally, some modeling approaches are proposed to improve compact flicker noise models to predict the noise behavior of RF circuits well.