Flicker noise modelling of small geometry LDD MOSFETs

被引：1
|
作者：
Kalra, E
Kumar, A
Haldar, S
Gupta, RS
机构：
[1] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, New Delhi 110021, India
[2] Moti Lal Nehru Coll, Dept Phys, New Delhi 110021, India
来源：
MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 02期
关键词：
noise; small geometry; LDD-MOSFET;
D O I：
10.1016/S0026-2692(00)00102-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical 1/f noise model based on the evaluation of channel charge in small geometry Lightly Doped Drain (LDD) MOSFETs is developed. The analysis includes the short channel, narrow width, LDD and DIBL effects. The intricacy of analyses when both the device dimensions are scaled together has been overcome and a simple model valid in the submicrometer range is presented. It is found that the noise in small geometry LDD MOSFETs is higher than that in the short channel LDD MOSFETs putting hard limit to miniaturisation widthwise. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：143 / 147
页数：5
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