Damage production in silicon irradiated with 112 MeV Ar ions

Silicon samples were irradiated below 50 K with 112 MeV Ar ions. Defect production was investigated at room temperature by EPR and infrared optical absorption techniques. The EPR measurements reveal the presence of amorphous zones and neutral tetravacancies (Si-P3 center) in the as-irradiated samples. The infrared optical absorption measurements indicate the formation of divacancy. The concentration of divacancy increases with ion fluence and saturates at high fluence. The isochronal annealing behaviors of the radiation induced defect centers are found to be fluence dependent. For 1.0 x 10(14)/cm(2) irradiated sample, the disappearance of the Si-P3 center is accompanied by the appearance of Si-P1 and Si-B2 centers and the growth of Si-A11 center. The Si-P1 center and the isolated amorphous regions are annealed out between 500 degrees C and 550 degrees C. The Si-A11 center is stable up to 600 degrees C. For 8.0 x 10(14)/cm(2) irradiated sample, only Si-P1 center and the line due to the continued amorphous layer are detected above 200 degrees C. The recrystallization of the continued amorphous layer occurs at temperature higher than 600 degrees C. (C) 1998 Elsevier Science B.V.