Paramagnetic defect production in silicon after 112MeV Ar ion irradiation

被引：0

作者：

Liu, CL ^{[1
]}

Hou, MD ^{[1
]}

Zhu, ZY ^{[1
]}

Cheng, S ^{[1
]}

Li, BQ ^{[1
]}

Sun, YM ^{[1
]}

Wang, ZG ^{[1
]}

Jin, YF ^{[1
]}

Li, CL ^{[1
]}

Wang, YS ^{[1
]}

Meng, QH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

来源：

HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION | 1998年 / 22卷 / 09期

关键词：

Ar ion irradiation; defect; electron paramagnetic resonance; annealing;

D O I：

暂无

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

Electron Paramagnetic Resonance has been used to investigate the defect produced in silicon by irradiation with 112MeV Ar ions below 50K. Several kinds of defects, which include the neutral 4-vacancy (Si-P3 center), amorphous center and etc. are observed in the as-irradiated samples. The Si-P3 center is distributed in the regions where electronic stopping power dominates and is annealed out at about 200 degrees C. Accompanied by the disappearance of the Si-P3 center, the complex vacancy clusters, such as Si-P1 center and Si-A11 center begin to grow. The recrystallization of the isolated amorphous region occurs at 350 degrees C. The radius of the produced amorphous region for low fluence Ar ion irradiated sample is evaluated and it is distributed in the range from 16 to 20 Angstrom. The results are qualitatively discussed.

引用

页码：858 / 863

页数：6

共 8 条

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