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- [2] Damage production in silicon irradiated with 112 MeV Ar ions NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 135 (1-4): : 219 - 223
- [3] Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 256 (01): : 243 - 247
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- [5] DEFECT PRODUCTION IN SILICON IMPLANTED WITH 13.6-MEV BORON IONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 94 (03): : 259 - 265
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- [8] Paramagnetic defect production in silicon after 112MeV Ar ion irradiation Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics, 22 (09): : 858 - 863
- [10] PARAMAGNETIC DEFECTS IN SILICON IRRADIATED WITH 40 MEV AS IONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 620 - 623