Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation

被引：0

作者：

Lee, David S. ^{[1
]}

Wirthlin, Michael ^{[2
]}

Swift, Gary ^{[3
]}

Le, Anthony C. ^{[4
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87123 USA

[2] Brigham Young Univ, Ctr High Performance Reconfigurable Comp, Dept Elect & Comp Engn, Provo, UT 84602 USA

[3] Swift Engn & Radiat Serv LLC, San Jose, CA 95124 USA

[4] Boeing, El Segundo, CA 90245 USA

来源：

2014 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2014年

基金：

美国国家科学基金会;

关键词：

D O I：

暂无

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM (TM) memory are provided. This study also describes an unconventional single-event latch-up signature observed during testing.

引用

页数：5

共 43 条

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