Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation

被引：0
|
作者：
Lee, David S. [1 ]
Wirthlin, Michael [2 ]
Swift, Gary [3 ]
Le, Anthony C. [4 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87123 USA
[2] Brigham Young Univ, Ctr High Performance Reconfigurable Comp, Dept Elect & Comp Engn, Provo, UT 84602 USA
[3] Swift Engn & Radiat Serv LLC, San Jose, CA 95124 USA
[4] Boeing, El Segundo, CA 90245 USA
来源：
2014 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2014年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM (TM) memory are provided. This study also describes an unconventional single-event latch-up signature observed during testing.
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页数：5
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