1/f noise optimum for field-effect transistors in single-ended resistive mixers

被引：0

作者：

Margraf, M ^{[1
]}

Boeck, G ^{[1
]}

机构：

[1] Berlin Univ Technol, Microwave Engn Grp, D-10587 Berlin, Germany

来源：

33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-frequency noise in single-ended resistive FET mixers is investigated with respect to the influence of the gate-source voltage. Using a simple broadband mixer with a Fujitsu HEMT, measurement and simulation results are compared yielding good agreement. Two mechanisms exists that create 1/f-noise: The self-mixing process and the self-mixing current Both cancel each other, i.e., there is a gate bias where a flicker noise minimum appears. The location of this minimum can be controlled with the DC output impedance.

引用

页码：1015 / 1017

页数：3

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