1/f noise optimum for field-effect transistors in single-ended resistive mixers

被引：0

作者：

Margraf, M ^{[1
]}

Boeck, G ^{[1
]}

机构：

[1] Berlin Univ Technol, Microwave Engn Grp, D-10587 Berlin, Germany

来源：

33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-frequency noise in single-ended resistive FET mixers is investigated with respect to the influence of the gate-source voltage. Using a simple broadband mixer with a Fujitsu HEMT, measurement and simulation results are compared yielding good agreement. Two mechanisms exists that create 1/f-noise: The self-mixing process and the self-mixing current Both cancel each other, i.e., there is a gate bias where a flicker noise minimum appears. The location of this minimum can be controlled with the DC output impedance.

引用

页码：1015 / 1017

页数：3

共 50 条

[31] DISCRIMINATION BETWEEN ONE-F NOISE MODELS IN JUNCTIONS FIELD-EFFECT TRANSISTORS AND METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - NUMERICAL RESULTS
VANDERZIEL, A
ZIJLSTRA, RJJ
PARK, HS
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4300 - 4304
[32] Terahertz Detection and Electronic Noise in Field-Effect Transistors
Mahi, Abdelhamid
Belghachi, Abderrahmane
Marinchio, Hugues
Palermo, Christophe
Varani, Luca
Shiktorov, Pavel
Gruzhinskis, Viktor
Starikov, Jevgenij
2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2013,
[33] LOW NOISE GaAs FIELD-EFFECT TRANSISTORS.
Ohkawa, Shinji
Suyama, Katsuhiko
Ishikawa, Hajime
Fujitsu Scientific and Technical Journal, 1975, 11 (01): : 151 - 173
[34] NOISE OF FIELD-EFFECT TRANSISTORS AT VERY HIGH FREQUENCIES
KLAASSEN, FM
PRINS, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) : 952 - &
[35] Automating measurements of noise temperature in field-effect transistors
Volozheninov, I.O.
Dyachkin, Yu.P.
Novitskii, V.A.
Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Zavedenii Radioelektronika), 1988, 31 (08): : 107 - 109
[36] EQUILIBRIUM NOISE IN ION SENSITIVE FIELD-EFFECT TRANSISTORS
HAEMMERLI, A
JANATA, J
BROPHY, JJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C135 - C135
[37] CITATION CLASSIC - THERMAL NOISE IN FIELD-EFFECT TRANSISTORS
VANDERZIEL, A
CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES, 1983, (14): : 22 - 22
[38] THE GATE CURRENT NOISE OF JUNCTION FIELD-EFFECT TRANSISTORS
STOCKER, JD
JONES, BK
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (01) : 93 - 102
[39] CARRIER DENSITY FLUCTUATION NOISE IN FIELD-EFFECT TRANSISTORS
VANDERZIEL, A
PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1671 - &
[40] Electrical and Noise Characteristics of Graphene Field-Effect Transistors
Shur, M.
Rumyantsev, S.
Liu, G.
Balandin, A. A.
2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 145 - 149

← 1 2 3 4 5 →