High-Performance ALD Al-Doped ZnO Thin-Film Transistors Grown on Flexible Substrates

被引：17
|
作者：
Rezk, Ayman [1 ]
Saadat, Irfan [1 ]
机构：
[1] Khalifa Univ, Elect & Comp Engn Dept, Abu Dhabi, U Arab Emirates
来源：
IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 02期
关键词：
Atomic layer deposition; doped zinc oxide; flexible structures; piezoelectric films; thin film transistors; zinc oxide; ELECTRICAL-PROPERTIES;
D O I：
10.1109/LED.2019.2890831
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a CMOS compatible high-performance ALD Al-doped ZnO thin-film transistor (TFT) fabricated on flexible substrate with a sub-150 degrees C processing temperature. The TFTs channel are optimized through Al doping (2-3 at.%) using all low-temperature steps to enable flexible substrate processing while minimizing the piezoelectric effect in the channel. The optimized device has an electron mobility as high as similar to 30 cm(2)/Vs in comparison to earlier reported values of 0.1-0.7 cm(2)/Vs for ZnO TFTs while maintaining desired threshold voltages of 1-2 V and I-ON/I-OFF ratios of 10(7)-10(9).
引用
收藏
页码：240 / 242
页数：3
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