Study of Raman intensity of Lo phonon modes in InGaAsP quaternary alloys grown on InP

被引：0
|
作者：
Sugiura, T [1 ]
Hase, N [1 ]
Iguchi, Y [1 ]
Sawaki, N [1 ]
机构：
[1] Toyota Coll Technol, Dept Elect Engn, Aichi 471, Japan
来源：
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICIPRM.1998.712579
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Raman intensities of optical phonon modes in InxGa1-xAsyP1-y quaternary alloys lattice matched to InP are studied in the region of the immiscibility. The peak intensity as well as the integral intensity of each phonon modes are investigated in terms of the relative density of corresponding bonds. It was found that the integral intensity is well interpreted with the bond density. But the replacement of a gallium atom with an indium gives remarkable variation in the peak intensity.
引用
收藏
页码：529 / 532
页数：4
相关论文
共 50 条
  • [41] Reduced temperature dependence of refractive-index in TlInGaAs quaternary alloys grown on InP substrates
    Imada, A
    Lee, HJ
    Fujiwara, A
    Emura, S
    Hasegawa, S
    Asahi, H
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6976 - 6978
  • [42] Reduced temperature dependence of refractive-index in TlInGaAs quaternary alloys grown on InP substrates
    Asahi, H. (asahi@sanken.osaka-u.ac.jp), 1600, American Institute of Physics Inc. (94):
  • [43] Raman study of phonon-plasmon coupling modes in tunnelling GaAs/AlAs superlattices, grown on (311) and (001) surfaces
    Volodin, VA
    Efremov, MD
    Sachkov, VA
    Preobrazhenski, VV
    Semyagin, BR
    Galaktionov, EA
    Orehov, DA
    NANOTECHNOLOGY, 2001, 12 (04) : 508 - 511
  • [44] New bulk and surface phonon-plasmon modes in Raman spectra of porous n-InP
    Denisov, VN
    Mavrin, BN
    Karavanskii, VA
    PHYSICS LETTERS A, 1999, 259 (01) : 62 - 66
  • [45] New bulk and surface phonon-plasmon modes in Raman spectra of porous n-InP
    Denisov, V.N.
    Mavrin, B.N.
    Karavanskii, V.A.
    Physics Letters, Section A: General, Atomic and Solid State Physics, 1999, 259 (01): : 62 - 66
  • [46] Raman spectra investigation of InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition
    Hu, S. Y.
    Lee, Y. C.
    Feng, Z. C.
    Weng, Y. H.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (06)
  • [47] LO phonon-plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys
    Tite, T
    Pagès, O
    Ajjoun, M
    Laurenti, JP
    Bormann, D
    Tournié, E
    Maksimov, O
    Tamargo, MC
    SOLID-STATE ELECTRONICS, 2003, 47 (03) : 455 - 460
  • [48] Characterization of the electron density in Si+-implanted InP by means of Raman scattering by LO-plasma coupled modes
    Inst Jaume Almera , Barcelona, Spain
    Mater Res Soc Symp Proc, (97-102):
  • [49] Characterization of the electron density in Si+-implanted InP by means of Raman scattering by LO-plasma coupled modes
    Ibáñez, J
    Cuscó, R
    Blanco, N
    González-Díaz, G
    Jiménez, J
    Artús, L
    MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, 1999, 540 : 97 - 102
  • [50] Interface roughness and confined LO phonon modes in (ZnSe)2(ZnS)11/GaAs(100) superlattices grown by PAVPE
    Tishchenko, VV
    Raptis, YS
    Anastassakis, E
    INTERNATIONAL CONFERENCE ON OPTICAL DIAGNOSIS OF MATERIALS AND DEVICES FOR OPTO-, MICRO-, AND QUANTUM ELECTRONICS 1997, 1998, 3359 : 346 - 350
12345