Study of Raman intensity of Lo phonon modes in InGaAsP quaternary alloys grown on InP

被引：0

作者：

Sugiura, T ^{[1
]}

Hase, N ^{[1
]}

Iguchi, Y ^{[1
]}

Sawaki, N ^{[1
]}

机构：

[1] Toyota Coll Technol, Dept Elect Engn, Aichi 471, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Raman intensities of optical phonon modes in InxGa1-xAsyP1-y quaternary alloys lattice matched to InP are studied in the region of the immiscibility. The peak intensity as well as the integral intensity of each phonon modes are investigated in terms of the relative density of corresponding bonds. It was found that the integral intensity is well interpreted with the bond density. But the replacement of a gallium atom with an indium gives remarkable variation in the peak intensity.

引用

页码：529 / 532

页数：4