Ion implant modeling for ULSI CMOS technology development and manufacturing

Ion implantation is widely used in integrated circuit manufacturing today and is expected to continue to be the dominant doping tool in the future. The reduced thermal budgets and scaled devices in succeeding generations of CMOS technology have resulted in a strong need for accurate models for the profiles of both the as-implanted impurities and the implant-induced damage. The ion implant models developed at the University of Texas at Austin will be described, which include computationally efficient analytical models and physically based models for B, BF2, As, and P.