Structure of epitaxial BiPbSrCuO films grown at low temperatures

被引:1
|
作者
Kishi, T [1 ]
Suzuki, K [1 ]
Serita, D [1 ]
Kubo, S [1 ]
Yamada, Y [1 ]
Ohba, T [1 ]
机构
[1] Shimane Univ, Fac Sci & Engn, Matsue, Shimane 6908504, Japan
来源
PHYSICA C | 2001年 / 357卷
关键词
BiSrCuO; BiPbSrCuO; thin films; non-c-axis-oriented growth;
D O I
10.1016/S0921-4534(01)00600-1
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bi2Sr2CanCun+1O2n+6 (n = 0, 1, 2) oxide superconductor films have a strong tendency to c-axis-oriented growth, though non-c-axis-oriented films are desirable from a standpoint of coherence length for the layered tunnel junction device applications. Here we examine possibility of non-c-axis-oriented film growth in Bi2201 (n = 0) phase (including Pb-doped Bi2201 (BiPb2201) phase). The reason of the use of these systems is that they have wider stable regions in growth temperature and composition than those of the other two phases (n = 1, 2). For Bi2201 films, only c-axis-orientation was observed irrespective of substrate temperature and substrate orientation. On the other hand, for BiPb2201 films, we found unknown new phase formation at narrow substrate temperatures around 520 degreesC. Film growth direction of this phase is affected by substrate orientation, and the film orientation is presumably to be (0 0 1) on SrTiO3 (STO) (1 1 0) substrates and (1 0 0) on STO (1 0 0) substrates, which was revealed by means of 4-circle X-ray diffractometory. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:1394 / 1398
页数:5
相关论文
共 50 条
  • [21] Evidence of ferromagnetic ordering at low temperatures in epitaxial TbMnO3 thin films grown by means of DC magnetron sputtering
    Izquierdo, J. L.
    Astudillo, A.
    Martinez, J.
    Bolanos, G.
    Moran, O.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 498
  • [22] Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy
    Bobrovnikova I.A.
    Veinger A.I.
    Vilisova M.D.
    Ivonin I.V.
    Lavrent'eva L.G.
    Lubyshev D.I.
    Preobrazhenskii V.V.
    Putyato M.A.
    Semyagin B.R.
    Subach S.V.
    Chaldyshev V.V.
    Yakubenya M.P.
    Russian Physics Journal, 1998, 41 (9) : 885 - 893
  • [23] DEEP TRAPS IN MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES
    LOOK, DC
    FANG, ZQ
    YAMAMOTO, H
    SIZELOVE, JR
    MIER, MG
    STUTZ, CE
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 1029 - 1032
  • [24] Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition
    Yasutake, Kiyoshi
    Tawara, Naotaka
    Ohmi, Hiromasa
    Terai, Yoshikazu
    Kakiuchi, Hiroaki
    Watanabe, Heiji
    Fujiwara, Yasufumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (4 B): : 2510 - 2515
  • [25] Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition
    Yasutake, Kiyoshi
    Tawara, Naotaka
    Ohmi, Hiromasa
    Terai, Yoshikazu
    Kakiuchi, Hiroaki
    Watanabe, Heiji
    Fujiwara, Yasufumi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2510 - 2515
  • [26] SPECTROSCOPIC CHARACTERIZATION OF LOW-TEMPERATURE-GROWN GAAS EPITAXIAL-FILMS
    TANI, M
    SAKAI, K
    ABE, H
    NAKASHIMA, S
    HARIMA, H
    HANGYO, M
    TOKUDA, Y
    KANAMOTO, K
    ABE, YJ
    TSUKADA, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9A): : 4807 - 4811
  • [27] An investigation of structural defects in diamond films grown at low substrate temperatures
    Stiegler, J
    Michler, J
    Blank, E
    DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 651 - 656
  • [28] FMR IN EPITAXIAL GARNET-FILMS ON PARAMAGNETIC SUBSTRATE AT LOW-TEMPERATURES
    DANILOV, VV
    LYFAR, DL
    LYUBONKO, YV
    NECHIPORUK, AY
    RYABCHENKO, SM
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1989, 32 (04): : 48 - 53
  • [29] Crystal structure of epitaxial quaterthiophene thin films grown on potassium acid phthalate
    Timpanaro, S
    Sassella, A
    Borghesi, A
    Porzio, W
    Fontaine, P
    Goldmann, M
    ADVANCED MATERIALS, 2001, 13 (02) : 127 - 130
  • [30] Structure of ultrathin epitaxial CeO2 films grown on Si(111)
    Joumori, S
    Nakajima, K
    Suzuki, M
    Kimura, K
    Nishikawa, Y
    Matsushita, D
    Yamaguchi, T
    Satou, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11B): : 7881 - 7883