Photoluminescence study of defect-free epitaxial silicon films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition

被引：0

作者：

Yasutake, Kiyoshi ^{[1
]}

Tawara, Naotaka ^{[1
]}

Ohmi, Hiromasa ^{[1
]}

Terai, Yoshikazu ^{[2
]}

Kakiuchi, Hiroaki ^{[1
]}

Watanabe, Heiji ^{[1
]}

Fujiwara, Yasufumi ^{[2
]}

机构：

[1] Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

[2] Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期

关键词：

28;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：2510 / 2515

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