Advanced 1.3 μm Vertical Cavity Lasers Based on AlInGaAs/InP-AlGaAs/GaAs Fused Structures

被引：0

作者：

Sirbu, A. ^{[1
]}

Iakovlev, V. ^{[1
]}

Keller, S. T. ^{[1
]}

Mereuta, A. ^{[1
]}

Caliman, A. ^{[1
]}

Kapon, E. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

来源：

2015 17th International Conference on Transparent Optical Networks (ICTON) | 2015年

关键词：

long-wavelength VCSELs; wafer fusion VCSEL technology; fiber-optic communication; long-wavelength VECSELs; SEMICONDUCTOR DISK LASER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on recent status of vertical cavity lasers emitting in the 1.3 mu m waveband comprising AlInGaAs/InP active regions wafer fused to Al(Ga)As/GaAs distributed Bragg reflectors. This technique produces vertical cavity surface emitting lasers (VCSELs) emitting in 4 channels of the 1310 nm coarse wavelength division multiplexing band that enabled a new generation of transceivers operating at 40 Gbps over 2 km of standard single mode fiber with a power consumption as low as 1 W and vertical external cavity surface emitting lasers (VECSELs) with record output power of 8.5 W.

引用

页数：3

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