Advanced 1.3 μm Vertical Cavity Lasers Based on AlInGaAs/InP-AlGaAs/GaAs Fused Structures

被引：0
|
作者：
Sirbu, A. [1 ]
Iakovlev, V. [1 ]
Keller, S. T. [1 ]
Mereuta, A. [1 ]
Caliman, A. [1 ]
Kapon, E. [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland
来源：
2015 17th International Conference on Transparent Optical Networks (ICTON) | 2015年
关键词：
long-wavelength VCSELs; wafer fusion VCSEL technology; fiber-optic communication; long-wavelength VECSELs; SEMICONDUCTOR DISK LASER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on recent status of vertical cavity lasers emitting in the 1.3 mu m waveband comprising AlInGaAs/InP active regions wafer fused to Al(Ga)As/GaAs distributed Bragg reflectors. This technique produces vertical cavity surface emitting lasers (VCSELs) emitting in 4 channels of the 1310 nm coarse wavelength division multiplexing band that enabled a new generation of transceivers operating at 40 Gbps over 2 km of standard single mode fiber with a power consumption as low as 1 W and vertical external cavity surface emitting lasers (VECSELs) with record output power of 8.5 W.
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页数：3
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