The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

被引：0
|
作者：
VanderStricht, W [1 ]
Moerman, I [1 ]
Demeester, P [1 ]
Crawley, JA [1 ]
Thrush, EJ [1 ]
Middleton, PG [1 ]
Cowan, CT [1 ]
ODonnell, KP [1 ]
机构：
[1] STATE UNIV GHENT,IMEC,DEPT INFORMAT TECHNOL,B-9000 GHENT,BELGIUM
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：231 / 236
页数：6
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