Orientation dependence of secondary recrystallisation in silicon-iron observations and analysis

被引：0

作者：

Hutchinson, B ^{[1
]}

Homma, H ^{[1
]}

机构：

[1] Swedish Inst Met Res, S-11428 Stockholm, Sweden

来源：

GRAIN GROWTH IN POLYCRYSTALLINE MATERIALS III | 1998年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A strong dependence on matrix texture was demonstrated for Goss secondary recrystallisation in 3 % silicon iron. Preferential consumption of grains having relationships of type Sigma 9 to Goss orientation was determined by EBSP measurement and discussed based on the assumption of low energy CSL boundaries, which experience a reduced Zener pinning force from particles.

引用

页码：387 / 396

页数：10

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