High fluence nitrogen implantation in Al/Ti multilayers

被引：1

作者：

Perusko, D. ^{[1
]}

Milosavljevic, M. ^{[1
,3
]}

Milinovic, V. ^{[1
]}

Timotijevic, B. ^{[1
]}

Zalar, A. ^{[2
]}

Kovac, J. ^{[2
]}

Pracek, B. ^{[2
]}

Jeynes, C. ^{[3
]}

机构：

[1] VINCA Inst Nucl Sci, Belgrade 11001, Serbia

[2] Jozef Stefan Inst, Ljubljana 1000, Slovenia

[3] Univ Surrey, Ion Beam Ctr, Guildford GU2 7XH, Surrey, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

Al/Ti multilayers; ion implantation; hard coatings; RBS; AES; TEM;

D O I：

10.1016/j.nimb.2008.03.034

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2503 / 2506

页数：4

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