Influence of film composition on the structure and dielectric properties of anodic films on Ti-W alloys

被引:37
|
作者
Habazaki, H [1 ]
Uozumi, M
Konno, H
Shimizu, K
Nagata, S
Takayama, K
Oda, Y
Skeldon, P
Thompson, GE
机构
[1] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan
[2] Keio Univ, Univ Chem Lab, Yokohama, Kanagawa 2238251, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[4] Cabot Supermetals Co Ltd, Fukushima 9693431, Japan
[5] Univ Manchester, Sch Mat, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England
关键词
D O I
10.1149/1.1940750
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The influence of tungsten on an amorphous-to-crystalline transition, leading to formation of anatase, and dielectric properties is examined for anodic oxides on Ti-W alloys. The structural change, which occurs at voltages of similar to 10 V on high- purity titanium, and provides sites for generation of high- pressure gas oxygen bubbles, is suppressed to progressively increased voltages by increasing tungsten content of the film. Phosphorus species, derived from the electrolyte, also hinder the change. The tungsten species are located in the inner similar to 80% of the film thickness as result of the faster migration of Ti4+ ions relative to that of W6+ ions in the growing oxide. Although the reported permittivity of anodic tungsten oxide is higher than that of amorphous anodic titania, the permittivity of the films on alloys decreases gradually with increasing tungsten content. (c) 2005 The Electrochemical Society. [DOI: 10.1149/1.1940750] All rights reserved.
引用
收藏
页码:B263 / B270
页数:8
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