GaSb-based >3 μm laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation

被引：11
|
作者：
Kaspi, Ron [1 ]
Lu, Chunte A. [1 ]
Newell, Tim C. [1 ]
Yang, Chi [1 ]
Luong, Sanh [1 ]
机构：
[1] AFRL RDLTD, Directed Energy Directorate, Air Force Res Lab, Albuquerque, NM 87117 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2015年 / 424卷
关键词：
Molecular beam epitaxy; Antimonides; Semiconducting III-V materials; Laser diodes; OPERATION;
D O I：
10.1016/j.jcrysgro.2015.04.043
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We describe the growth of GaSb-based diode lasers with quinary AlInGaAsSb alloy waveguide/barriers and highly strained InGaAsSb type-I quantum wells, designed to emit at similar to 3.2 mu m at room temperature. To increase the compressive strain in the QWs above the pseudomorphic limit, we employ strain compensation in which the lower portion of the quinary alloy waveguide is slightly arsenic-rich as compared to the lattice-matched composition. Using this scheme, we fabricated a set of laser devices with incrementally increasing compressive strain in the quantum wells. With compressive strain reaching as high as similar to 2.4%, the device performance corroborates the notion that adding compressive strain in the quantum wells helps improve hole confinement and suppresses carrier leakage during operation near room temperature. Published by Elsevier B.V.
引用
收藏
页码：24 / 27
页数：4
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