4H-SiC device scaling development on repaired micropipe substrates

The impact of SiC Liquid-Phase Epitaxy (LPE) on improving the breakdown behavior of Schottky diodes is examined. This technique, which is know to fill in large area open core screw dislocation defects known as micropipes, has not been examined for its impact on other, smaller closed core screw dislocations, which are known to limit the scaling of large area SiC power devices. After statistical analysis of breakdown voltages on 83 small-area diodes (chosen so that defects other than micropipes would be primary yield limiters), distributed on both a control and LPE treated samples, no significant difference in breakdown voltage is observed.