4H-SiC device scaling development on repaired micropipe substrates

被引：0

作者：

Schattner, TE ^{[1
]}

Casady, JB

Smith, MCD

Mazzola, MS

Dimitriev, VA

Rentakova, SV

Saddow, SE

机构：

[1] Mississippi State Univ, Dept Elect & Comp Engn, Emerging Mat Res Lab, Mississippi State, MS 39762 USA

[2] Howard Univ, Washington, DC 20059 USA

[3] TDI Inc, Gaithersburg, MD 20877 USA

[4] WBG Res Grp, Phys Tech, Ioffe Inst, RU-194021 St Petersburg, Russia

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

defect; diode; epitaxy; LPE; micropipe; scaling; Schottky;

D O I：

10.4028/www.scientific.net/MSF.338-342.1203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impact of SiC Liquid-Phase Epitaxy (LPE) on improving the breakdown behavior of Schottky diodes is examined. This technique, which is know to fill in large area open core screw dislocation defects known as micropipes, has not been examined for its impact on other, smaller closed core screw dislocations, which are known to limit the scaling of large area SiC power devices. After statistical analysis of breakdown voltages on 83 small-area diodes (chosen so that defects other than micropipes would be primary yield limiters), distributed on both a control and LPE treated samples, no significant difference in breakdown voltage is observed.

引用

页码：1203 / 1206

页数：4

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