SrTiO3 insulator for low-voltage organic field-effect transistors
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作者:
Yan, Hu
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Univ Yamanashi, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, JapanUniv Yamanashi, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan
Yan, Hu
[1
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Okuzaki, Hidenori
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Univ Yamanashi, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, JapanUniv Yamanashi, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan
Okuzaki, Hidenori
[1
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机构:
[1] Univ Yamanashi, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan
Organic field-effect transistors (FETs) are considered to be used as high-end electronics and low-end ones. In the low-end electronics such as radio-frequency identification tags and smart-cards the devices should be battery-powered and then need to operate at a few volts. Majority of the organic FETs reported to date, however, can only operate well at a voltage as high as similar to 100V. Three kinds of approaches have been mainly proposed and studied in order to achieve low-voltage organic FETs. First one is simply using a high-k insulator to obtain certain electric capacitance at lower gate voltages. Second one is using a nanometer-thick self-assembled monolayer of organic compound as the gate dielectric. Third one is using a polymer composite containing ionic liquid. Here we briefly review typical studies using the three approaches to achieve the low-voltage organic FETs in the first part of this subject review, and then we focus on our recent progress in the low-voltage organic FETs mainly using strontium titanate as a high-k insulator in the second part. (C) 2011 Elsevier B.V. All rights reserved.
机构:
Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAUniv Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
Kim, David K.
Lai, Yuming
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Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USAUniv Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
Lai, Yuming
Vemulkar, Tarun R.
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Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USAUniv Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
Vemulkar, Tarun R.
Kagan, Cherie R.
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Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA
Univ Penn, Dept Chem, Philadelphia, PA 19104 USAUniv Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
机构:
Shandong Univ, Sch Integrated Circuits, Jinan 250100, Peoples R ChinaShandong Univ, Sch Integrated Circuits, Jinan 250100, Peoples R China
Fan, Baocai
Liu, Yichen
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Univ New South Wales, UNSW Mat & Mfg Futures Inst, Sch Mat Sci & Engn, Kensington, NSW 2052, AustraliaShandong Univ, Sch Integrated Circuits, Jinan 250100, Peoples R China
Liu, Yichen
Fu, Chen
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Univ, Sch Integrated Circuits, Jinan 250100, Peoples R China
Fu, Chen
Lin, Zhaojun
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Shandong Univ, Sch Integrated Circuits, Jinan 250100, Peoples R ChinaShandong Univ, Sch Integrated Circuits, Jinan 250100, Peoples R China
Lin, Zhaojun
Li, Sean
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Univ New South Wales, UNSW Mat & Mfg Futures Inst, Sch Mat Sci & Engn, Kensington, NSW 2052, AustraliaShandong Univ, Sch Integrated Circuits, Jinan 250100, Peoples R China